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| 2N3792 MECHANICAL DATA Dimensions in mm(inches) 40.01 (1.575) Max. PNP SILICON EPITAXIAL BASE POWER TANSISTORS 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) APPLICATIONS Linear Power and Switching Applications 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1 16.97 (0.668) 16.87 (0.664) TO3 PIN 1 -- Base PIN 2 -- Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO(sus) VEBO IC IB PTOT Tstg, Tj, Collector - Base Voltage(IE = 0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage(IC = 0) Collector Current Base Current Total Power Dissipation at Tcase = 25C Storage Temperature Junction Temperature 80V 80V 7V 10A 4A 150W 65 to 200C 200C THERMAL CHARACTERISTICS RqJC Thermal Resistance, Junction to Case 1.17 C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 06/00 2N3792 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* VCE(sat)* VBE(on)* IEBO ICEX Collector - Emitter Sustaining Voltage Collector - Emitter Saturation Voltage Base Emitter Voltage Emmiter Cut-off Current Collector Cut-off Current Test Conditions IC = 200mA IC = 5A IC = 5A IC = 10A IC = 0 VBE = 1.5V IC = 1A IB = 0 IB = 0.5V VCC = 2V VCC = 4V VEB =7V VCE = 80 Tc = 150C VCE = 2V VCE = 2V VCE = 4V VCE = 10V Min. -80 Typ. Max. Unit V -1 1.8 4 -5 -1 -5 50 30 5 4 MHz 150 120 -- V mA mA hFE* DC Current Gain IC = 3A IC = 10A IC = 0.5A f =1.MHz ft Transition Frequency * Pulsed duration = 300 ms, duty cycle = 1.5% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 06/00 |
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